Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium

István Daruka and Albert-László Barabási
Phys. Rev. Lett. 79, 3708 – Published 10 November 1997
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Abstract

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation-free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening.

  • Received 8 May 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.3708

©1997 American Physical Society

Authors & Affiliations

István Daruka and Albert-László Barabási

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

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Vol. 79, Iss. 19 — 10 November 1997

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