Theory of Threading Edge and Screw Dislocations in GaN

J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M. Elstner, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon
Phys. Rev. Lett. 79, 3672 – Published 10 November 1997
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Abstract

The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to ( 101¯0) surfaces.

  • Received 8 July 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.3672

©1997 American Physical Society

Authors & Affiliations

J. Elsner and R. Jones

  • Department of Physics, University of Exeter, Exeter, EX4 4QL, United Kingdom

P. K. Sitch, V. D. Porezag, M. Elstner, and Th. Frauenheim

  • Technische Universität, Theoretische Physik III, D-09107 Chemnitz, Germany

M. I. Heggie

  • CPES, University of Sussex, Falmer, Brighton, BN1 9QJ, United Kingdom

S. Öberg

  • Department of Mathematics, University of Luleå, Luleå, S97 187, Sweden

P. R. Briddon

  • Department of Physics, University of Newcastle upon Tyne, Newcastle, NE1 7RU, United Kingdom

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Vol. 79, Iss. 19 — 10 November 1997

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