Abstract
We report the first near-field optical study of single GaAs quantum wires grown on patterned GaAs surfaces. Spatially resolved optical spectra at a temperature of 10 K give evidence for one-dimensional carrier confinement and subband structure. At 300 K, electron-hole pairs in continuum states undergo diffusive real-space transfer over a length of several microns determined by hole mobility and trapping by optical phonon emission. Optical phonon scattering of carriers in the quantum wire establishes a quasiequilibrium carrier distribution in both wire and continuum states.
- Received 18 February 1997
DOI:https://doi.org/10.1103/PhysRevLett.79.2145
©1997 American Physical Society