Resonant Terahertz Optical Sideband Generation from Confined Magnetoexcitons

J. Kono, M. Y. Su, T. Inoshita, T. Noda, M. S. Sherwin, S. J. Allen, Jr., and H. Sakaki
Phys. Rev. Lett. 79, 1758 – Published 1 September 1997
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Abstract

We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-band-gap emission lines, or optical sidebands, appear at frequencies ωNIR±2nωTHz, where ωNIR is the interband exciton-creation frequency, ωTHz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ωTHz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.

  • Received 20 March 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.1758

©1997 American Physical Society

Authors & Affiliations

J. Kono1, M. Y. Su2, T. Inoshita1, T. Noda3, M. S. Sherwin2, S. J. Allen, Jr.2, and H. Sakaki1,3

  • 1Quantum Transition Project, Japan Science and Technology Corporation, Tokyo 153, Japan
  • 2Center for Terahertz Science and Technology and Department of Physics, University of California, Santa Barbara, California 93106
  • 3Institute of Industrial Science, University of Tokyo, Tokyo 106, Japan

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Issue

Vol. 79, Iss. 9 — 1 September 1997

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