Band Mobility of Photoexcited Electrons in Bi12SiO20

Ivan Biaggio, Robert W. Hellwarth, and Jouni P. Partanen
Phys. Rev. Lett. 78, 891 – Published 3 February 1997
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Abstract

We determine the band mobility of photoexcited electrons in cubic n-type Bi12SiO20. We measure a room-temperature mobility of 3.4±0.5cm2/(Vs) that decreases monotonically to 1.7±0.3cm2/(Vs) as the temperature is increased to 200 °C. We show that electrons in Bi12SiO20 form large polarons. Our results are predicted by strong coupling polaron theory if the band mass of the electrons is chosen to be 2.0±0.1 electron masses. We determine the electron-phonon coupling constant and effective longitudinal optical phonon frequency required for this prediction from the available infrared reflectivity spectrum of Bi12SiO20.

  • Received 10 May 1996

DOI:https://doi.org/10.1103/PhysRevLett.78.891

©1997 American Physical Society

Authors & Affiliations

Ivan Biaggio, Robert W. Hellwarth, and Jouni P. Partanen

  • University of Southern California, Departments of Physics and Electrical Engineering, Los Angeles, California 90089-0484

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Vol. 78, Iss. 5 — 3 February 1997

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