Fundamental Relation between Electrical and Thermoelectric Transport Coefficients in the Quantum Hall Regime

B. Tieke, R. Fletcher, U. Zeitler, A. K. Geim, M. Henini, and J. C. Maan
Phys. Rev. Lett. 78, 4621 – Published 16 June 1997
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Abstract

The two components Sxx and Syx of the phonon-drag thermoelectric power in two-dimensional electron gases (2DEGs) are found to be related by Syx=αB(dSxx/dB) in the integer and fractional quantum Hall regime. A similar relation exists for electrical resistivity, ρxx=αB(dρxy/dB), and we show that experimentally the constant α is the same in both cases indicating the universal character of such relations for transport in 2DEGs. These results link the behavior of Syx, which hitherto has not been understood, to that of Sxx and thus opens a new way of explaining this quantity.

  • Received 20 November 1996

DOI:https://doi.org/10.1103/PhysRevLett.78.4621

©1997 American Physical Society

Authors & Affiliations

B. Tieke1, R. Fletcher2, U. Zeitler3, A. K. Geim1, M. Henini3, and J. C. Maan1

  • 1Research Institute for Materials, High Field Magnet Laboratory, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
  • 2Physics Department, Queen's University, Kingston, Ontario, Canada K7L 3N6
  • 3Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom

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Issue

Vol. 78, Iss. 24 — 16 June 1997

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