Ab initio Molecular Dynamics Simulation of Laser Melting of Silicon

Pier Luigi Silvestrelli, Ali Alavi, Michele Parrinello, and Daan Frenkel
Phys. Rev. Lett. 77, 3149 – Published 7 October 1996
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Abstract

The method of ab initio molecular dynamics, based on finite temperature density functional theory, is used to simulate laser heating of crystal silicon. We have found that a high concentration of excited electrons dramatically weakens the covalent bond. As a result, the system undergoes a melting transition to a metallic state. In contrast to ordinary liquid silicon, the new liquid is characterized by a high coordination number and a strong reduction of covalent bonding effects.

  • Received 21 May 1996

DOI:https://doi.org/10.1103/PhysRevLett.77.3149

©1996 American Physical Society

Authors & Affiliations

Pier Luigi Silvestrelli1, Ali Alavi2, Michele Parrinello1, and Daan Frenkel3

  • 1Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
  • 2Atomistic Simulation Group, School of Mathematics and Physics, The Queen's University, Belfast BT7 1NN, Northern Ireland, United Kingdom
  • 3FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands

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Issue

Vol. 77, Iss. 15 — 7 October 1996

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