Abstract
A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient compared with an ambipolar coefficient .
- Received 15 September 1995
DOI:https://doi.org/10.1103/PhysRevLett.76.4793
©1996 American Physical Society