Abstract
We have calculated the tunneling density of states (DOS) at the location of a backward scattering defect for quantum wires and for edge state electrons in quantum Hall systems. A singular enhancement of the DOS arises as a result of the combined effect of multiple backward scattering together with a repulsive electron-electron interaction.
- Received 10 January 1996
DOI:https://doi.org/10.1103/PhysRevLett.76.4230
©1996 American Physical Society
