Fermi Edge Singularities in Doped Quantum Wells with Strong In-Plane Type I Modulation

T. Mélin and F. Laruelle
Phys. Rev. Lett. 76, 4219 – Published 27 May 1996
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Abstract

Doped lateral superlattices realized on misoriented semiconductors substrates provide a tunable type I potential at the scale of both Fermi wavelength and Fermi energy of the electron system. The tuning of amplitude and symmetry changes efficiently the electron-hole overlap and the hole dimensionality. These two parameters control many-body processes involved in the photon emission at the Fermi level. The resulting spectral singularity is evidenced in photoluminescence experiments at low temperature.

  • Received 5 September 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.4219

©1996 American Physical Society

Authors & Affiliations

T. Mélin and F. Laruelle

  • Laboratoire de Microstructures et de Microélectronique, Centre National de la Recherche Scientifique, B.P. 107, 92225 Bagneux Cedex, France

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Vol. 76, Iss. 22 — 27 May 1996

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