Quantum Localization Effects on Spin Transport in Semiconductor Quantum Wells with Zinc-Blende Crystal Structure

A. G. Mal`shukov, K. A. Chao, and M. Willander
Phys. Rev. Lett. 76, 3794 – Published 13 May 1996
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Abstract

We have shown that due to weak localization corrections, in the spin-split conduction band of quantum wells with zinc-blende structure, the electron spin relaxation rate due to the D'yakonov-Perel' mechanism decreases logarithmically with decreasing frequency. The spin diffusion coefficient also decreases. This is quite different from antilocalization behavior at large times of the particle diffusion and conductivity. Possible experimental detection is suggested.

  • Received 31 May 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.3794

©1996 American Physical Society

Authors & Affiliations

A. G. Mal`shukov

  • Institute of Spectroscopy, Russian Academy of Science, 142092, Troitsk, Moscow obl., Russia

K. A. Chao

  • Department of Physics, Norwegian Institute of Technology, The University of Trondheim, N-7034 Trondheim, Norway

M. Willander

  • Department of Physics and Measurement Technology, The University of Linköping, S-58183 Linköping, Sweden

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Issue

Vol. 76, Iss. 20 — 13 May 1996

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