Hall Resistance in the Hopping Regime: A "Hall Insulator"?

O. Entin-Wohlman, A. G. Aronov, Y. Levinson, and Y. Imry
Phys. Rev. Lett. 75, 4094 – Published 27 November 1995
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Abstract

The Hall conductivity and resistivity of strongly localized electrons at low temperatures and small magnetic fields are obtained. The results depend on whether one uses the conductivity or resistivity tensor to obtain the macroscopic Hall resistivity. In the second case the Hall resistivity always diverges exponentially as T0. However, when the Hall resistivity is derived from the conductivity, the resulting temperature dependence is sensitive to the disorder configuration, and the Hall resistivity may approach a constant value as T0. This is the Hall insulating behavior. It is argued that for strictly dc conditions the transport quantity that should be averaged is the resistivity, and this shows no Hall insulating behavior.

  • Received 17 March 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.4094

©1995 American Physical Society

Authors & Affiliations

O. Entin-Wohlman

  • School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel

A. G. Aronov*, Y. Levinson, and Y. Imry

  • Condensed Matter Department, The Weizmann Institute of Science, Rehovot 76100, Israel

  • *Deceased.

Comments & Replies

Comment on ``Hall Resistance in the Hopping Regime: A `Hall Insulator'?''

O. Bleibaum, H. Böttger, and V. V. Bryksin
Phys. Rev. Lett. 79, 2752 (1997)

Entin-Wohlman, Levinson, and Imry Reply:

O. Entin-Wohlman, Y. Levinson, and Y. Imry
Phys. Rev. Lett. 79, 2753 (1997)

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Vol. 75, Iss. 22 — 27 November 1995

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