Role of Biexcitons in the Stimulated Emission of Wide-Gap II-VI Quantum Wells

F. Kreller, M. Lowisch, J. Puls, and F. Henneberger
Phys. Rev. Lett. 75, 2420 – Published 18 September 1995; Erratum Phys. Rev. Lett. 76, 1982 (1996)
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Abstract

On high-quality ZnCdSe/ZnSe quantum wells the occurrence of a new emission feature energetically below the exciton transition is demonstrated from which stimulated emission and gain emerge at elevated excitation levels (10 kW/ cm2). Application of a magnetic field allows us to distinguish this feature from bound excitons and evidence its biexciton nature. Subpicosecond excite-and-probe measurements reveal the scenario of exciton-exciton interaction in the presence of alloy disorder (localization). A model accounting for bound and antibound two-exciton states provides good agreement with the experimental data.

  • Received 7 February 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.2420

©1995 American Physical Society

Erratum

Role of Biexcitons in the Stimulated Emission of Wide-Gap II-VI Quantum Wells

F. Kreller, M. Lowisch, J. Puls, and F. Henneberger
Phys. Rev. Lett. 76, 1982 (1996)

Authors & Affiliations

F. Kreller, M. Lowisch, J. Puls, and F. Henneberger

  • Institut für Physik, Invalidenstrasse 110, Humboldt-Universität Berlin, 10115 Berlin, Germany

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Vol. 75, Iss. 12 — 18 September 1995

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