Abstract
We have demonstrated a new tunneling process: the direct creation of GaAs quantum well excitons through electron resonant tunneling. The two-particle nature of such a tunneling process makes it different from the ordinary one-particle (electron, hole, or exciton) tunneling process in resonant tunneling conditions and results in different - characteristics. This resonant tunneling process may open a door toward electrically pumped excitonic cavity quantum electrodynamics and optoelectronic devices.
- Received 15 December 1994
DOI:https://doi.org/10.1103/PhysRevLett.75.1146
©1995 American Physical Society