Abstract
Ferromagnetic-insulator-ferromagnetic tunneling has been measured in CoFe A Co or NiFe junctions. At 295, 77, and 4.2 K the fractional change in junction resistance with magnetic field, , is 11.8%, 20%, and 24%, respectively. The value at 4.2 K is consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films. changes little with a small voltage bias, whereas it decreases significantly at higher bias , in qualitative agreement with Slonczewski's model. These junctions have potential use as low-power field sensors and memory elements.
- Received 29 November 1994
DOI:https://doi.org/10.1103/PhysRevLett.74.3273
©1995 American Physical Society