Abstract
We investigate low temperature transport in arrays of GaAs quantum dots in which coupling between dots and electron density is controlled by a single gate. Current-voltage curves obey a power law above a threshold voltage with exponent , and show discontinuous and hysteretic jumps in the current, or “switching events.” Multiple switching events result in a hierarchy of hysteresis loops. Switching and hysteresis decrease with increasing temperature and disappear above 1 K. A possible mechanism for the hysteresis involving gate-to-dot tunneling is discussed.
- Received 17 August 1994
DOI:https://doi.org/10.1103/PhysRevLett.74.3237
©1995 American Physical Society