Conduction Threshold, Switching, and Hysteresis in Quantum Dot Arrays

C. I. Duruöz, R. M. Clarke, C. M. Marcus, and J. S. Harris, Jr.
Phys. Rev. Lett. 74, 3237 – Published 17 April 1995
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Abstract

We investigate low temperature transport in 200×200 arrays of GaAs quantum dots in which coupling between dots and electron density is controlled by a single gate. Current-voltage curves obey a power law above a threshold voltage with exponent 1.5, and show discontinuous and hysteretic jumps in the current, or “switching events.” Multiple switching events result in a hierarchy of hysteresis loops. Switching and hysteresis decrease with increasing temperature and disappear above 1 K. A possible mechanism for the hysteresis involving gate-to-dot tunneling is discussed.

  • Received 17 August 1994

DOI:https://doi.org/10.1103/PhysRevLett.74.3237

©1995 American Physical Society

Authors & Affiliations

C. I. Duruöz1, R. M. Clarke2, C. M. Marcus2, and J. S. Harris, Jr.1

  • 1Solid State Electronics Laboratory, Stanford University, Stanford, California 94305-4055
  • 2Department of Physics, Stanford University, Stanford, California 94305-4060

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Vol. 74, Iss. 16 — 17 April 1995

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