Exciton Condensate in Semiconductor Quantum Well Structures

Xuejun Zhu, P. B. Littlewood, Mark S. Hybertsen, and T. M. Rice
Phys. Rev. Lett. 74, 1633 – Published 27 February 1995
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Abstract

We propose that the exciton condensate may form in a well-controlled way in appropriately arranged semiconductor quantum well structures. The mean-field theory of Keldysh and Kopaev, exact in both the high density and low density limits, is solved numerically to illustrate our proposal. The electron-hole pairing gap and the excitation spectrum of the exciton condensate are obtained. The energy scales of the condensate are substantial at higher densities. We discuss how such densities could be achieved experimentally by generating an effective pressure.

  • Received 10 November 1994

DOI:https://doi.org/10.1103/PhysRevLett.74.1633

©1995 American Physical Society

Authors & Affiliations

Xuejun Zhu1, P. B. Littlewood2, Mark S. Hybertsen2, and T. M. Rice2,3

  • 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855
  • 2AT&T Bell Laboratories, Murray Hill, New Jersey 07974
  • 3ETH-Honggerberg CH-8093, Zurich, Switzerland

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Issue

Vol. 74, Iss. 9 — 27 February 1995

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