Hot Carrier Scattering at Interfacial Dislocations Observed by Ballistic-Electron-Emission Microscopy

In situ ballistic-electron-emission microscopy (BEEM) has been performed at 77 K on partially strain-relaxed, epitaxial Co${\mathrm{Si}}_2$/Si(111) films grown by molecular beam epitaxy. Hot electron scattering at individual interfacial dislocations has been observed for the first time by BEEM. Standing wave formation in the metal and changes of the surface electronic structure give rise to significant contrast in BEEM images. Apart from the dislocation- and surface-induced contrast, the interfacial transmission is generally found to be homogeneous.