Ferroelectric Schottky Diode

P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn
Phys. Rev. Lett. 73, 2107 – Published 10 October 1994
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Abstract

A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 μm ferroelectric PbTiO3 film, a Au Schottky contact, and a La0.5Sr0.5CoO3 Ohmic bottom electrode. The observations are explained by a model in which the depletion width of the ferroelectric Schottky diode is determined by the polarization dependence of the internal electric field at the metal-ferroelectric interface.

  • Received 3 May 1994

DOI:https://doi.org/10.1103/PhysRevLett.73.2107

©1994 American Physical Society

Authors & Affiliations

P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn

  • Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands

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Vol. 73, Iss. 15 — 10 October 1994

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