Mechanism of epitaxial growth of monolayer CaF on Si(111)-(7×7)

T. Nakayama, M. Katayama, G. Selva, and M. Aono
Phys. Rev. Lett. 72, 1718 – Published 14 March 1994
PDFExport Citation

Abstract

Using scanning tunneling microscopy, the epitaxial growth of a monolayer of CaF on the Si(111)-7×7) surface has been studied. We observe how the Si atoms of the 7×7 structure rearrange into a bulklike structure and find that four excess Si atoms per 7×7 unit cell are produced in the transition to the bulklike structure. These excess Si atoms seem to remain in the epitaxial CaF layer, creating defects.

  • Received 10 December 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.1718

©1994 American Physical Society

Authors & Affiliations

T. Nakayama, M. Katayama, G. Selva, and M. Aono

  • The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan
  • Exploratory Research for Advanced Technology Aono Atomcraft Project, Research Development Corporation of Japan, 1-7-13 Kaga, Itabashi, Tokyo 173, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 72, Iss. 11 — 14 March 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×