Ultrafast relaxation of photoexcited carriers: The role of coherence in the generation process

Fausto Rossi, Stefan Haas, and Tilmann Kuhn
Phys. Rev. Lett. 72, 152 – Published 3 January 1994
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Abstract

A self-consistent description of the ultrafast dynamics of photoexcited carriers in semiconductors based on a generalized Monte Carlo solution of the semiconductor Bloch equations is presented. The problem of photogeneration and its theoretical description are discussed. We show that some of the approaches commonly used fail in describing correctly the effect of carrier-carrier interaction in the low-density limit. By including terms which have the structure of ‘‘in-scattering’’ terms (vertex corrections) for the interband polarization, the experimentally observed features in the carrier dynamics are well described in the whole density range.

  • Received 24 September 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.152

©1994 American Physical Society

Authors & Affiliations

Fausto Rossi and Stefan Haas

  • Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany

Tilmann Kuhn

  • Institut für Theoretische Physik, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany

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Vol. 72, Iss. 1 — 3 January 1994

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