Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fields

Philippe Boring, Bernard Gil, and Karen J. Moore
Phys. Rev. Lett. 71, 1875 – Published 20 September 1993
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Abstract

We show that efficient tunneling of holes can be produced in double quantum wells with built-in piezoelectric fields by the photo- screening of that piezoelectric field. Our observation was made at low temperatures by comparing the behavior of Ga0.92In0.08As-GaAs strained-layer double quantum wells grown along the (111) and (001) directions and tuning the densities of photoinjected carriers over several decades. Interpretation of the experimental data is made by comparison with Hartree calculations including the space charge effects. In addition to this, we also report the observation of many-body interactions at high photocarrier densities.

  • Received 2 June 1993

DOI:https://doi.org/10.1103/PhysRevLett.71.1875

©1993 American Physical Society

Authors & Affiliations

Philippe Boring and Bernard Gil

  • Groupe d’Etudes des Semiconducteurs, Université de Montpellier II, Case Courrier 074, 34095 Montpellier CEDEX 5, France

Karen J. Moore

  • Department of Mathematics and Physics, The Manchester Metropolitan University, John Dalton Building, Chester Street, Manchester M1 5GD, United Kingdom

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Issue

Vol. 71, Iss. 12 — 20 September 1993

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