Abstract
The scanning tunneling microscope is used to study arsenic-related point defects in low-temperature-grown GaAs. Tunneling spectroscopy reveals a band of donor states located near +0.5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 Å from the core. The structure of the defect is found to be consistent with that of an isolated arsenic antisite defect (As on a Ga site) in a tetrahedral environment.
- Received 28 April 1993
DOI:https://doi.org/10.1103/PhysRevLett.71.1176
©1993 American Physical Society