Quasidiffusion and the localized phonon source in photoexcited Si

M. E. Msall, S. Tamura, S. E. Esipov, and J. P. Wolfe
Phys. Rev. Lett. 70, 3463 – Published 31 May 1993
PDFExport Citation

Abstract

Previous observations of heat pulses produced by localized photoexcitation of silicon do not support the predictions of phonon ‘‘quasidiffusion’’ via anharmonic decay and elastic scattering. Our experiments, with controlled boundary conditions, verify that quasidiffusive theory is relevant in Si under very weak photoexcitation. Beyond this domain a transition to a localized source of low frequency phonons is attributed to excited carrier interactions. Photoluminescence experiments confirm the presence of electron-hole droplets coincident with this localized phonon source.

  • Received 8 March 1993

DOI:https://doi.org/10.1103/PhysRevLett.70.3463

©1993 American Physical Society

Authors & Affiliations

M. E. Msall, S. Tamura, S. E. Esipov, and J. P. Wolfe

  • Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • Department of Engineering Science, Hokkaido University, Sapporo 060, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 70, Iss. 22 — 31 May 1993

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×