Lattice mismatch dislocations in a preferentially sputtered alloy studied by scanning tunneling microscopy

M. Schmid, A. Biedermann, H. Stadler, and P. Varga
Phys. Rev. Lett. 69, 925 – Published 10 August 1992
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Abstract

Scanning tunneling microscopy (STM) on a sputtered and annealed Pt25Ni75(111) single crystal reveals a network of subsurface lattice mismatch dislocations caused by platinum enrichment due to preferential sputtering and recoil mixing. Atomically resolved STM topographs are compared with simulations of these dislocations using embedded atom potentials. This allows one to estimate the depth of the dislocations, and thus the thickness of Pt enrichment, which is three monolayers on the 500 eV Xe+ sputtered and five monolayers on the Ar+ sputtered surface, compatible with the depth of radiation damage.

  • Received 9 March 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.925

©1992 American Physical Society

Authors & Affiliations

M. Schmid, A. Biedermann, H. Stadler, and P. Varga

  • Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria

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Vol. 69, Iss. 6 — 10 August 1992

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