Zero-magnetic-field spin splitting in the GaAs conduction band from Raman scattering on modulation-doped quantum wells

B. Jusserand, D. Richards, H. Peric, and B. Etienne
Phys. Rev. Lett. 69, 848 – Published 3 August 1992
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Abstract

We present Raman scattering spectra of intrasubband excitations in an n-type modulation-doped single quantum well. We attribute a double peak in the depolarized spectra to be due to spin-flip single-particle transitions. This gives direct spectroscopic evidence at zero applied magnetic field of the spin splitting of the conduction band of GaAs due to the lack of inversion symmetry in zinc-blende compounds.

  • Received 2 March 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.848

©1992 American Physical Society

Authors & Affiliations

B. Jusserand, D. Richards, H. Peric, and B. Etienne

  • Groupement Scientifique, Centre National d’Etudes de Télécommunication, Centre National de la Recherche Scientifique, 196 avenue Henri Ravera, 92220 Bagneux, France
  • Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, England

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Issue

Vol. 69, Iss. 5 — 3 August 1992

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