Photoluminescence from a single GaAs/AlGaAs quantum dot

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann
Phys. Rev. Lett. 69, 3216 – Published 30 November 1992
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Abstract

Isolated single quantum dots of different size have been fabricated by laser-induced local interdiffusion of a GaAs/AlGaAs quantum-well structure. Microscopic photoluminescence (PL) reveals a splitting and a blueshift, which depend systematically on dot size. The distinct PL peaks separated in energy by up to 10 meV are attributed to recombination between zero-dimensional (0D) electron and hole states. Complete quantization and inherent exclusion of inhomogeneous broadening in a single dot structure cause PL linewidths below 0.5 meV. The strength of the higher-energy transitions indicates the slowed energy relaxation theoretically predicted for 0D systems.

  • Received 10 August 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.3216

©1992 American Physical Society

Authors & Affiliations

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann

  • Walter Schottky Institut, Technische Universität München, D-8046 Garching, Germany

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Vol. 69, Iss. 22 — 30 November 1992

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