Resistivity saturation in fcc La under high pressure

Data are presented for the electrical resistivity ρ of fcc La as a function of T and p in the range 70 to 700 K and 0 to 1.25 GPa. The data are analyzed using the phenomenological ‘‘parallel resistivity’’ formula for resistivity saturation, which describes very well the T dependences of both ρ and its pressure coefficient. The pressure coefficients of the electron-phonon interaction parameter and ${\mathit{T}}_{\mathit{c}}$ are calculated from the p dependence of the electron-phonon component, and the p dependence of the parallel saturation resistivity is obtained from band-structure calculations using a simple Bloch-Boltzmann model. In both cases excellent agreement with experiment is found.