Abstract
We theoretically investigate excitonic effects on the optical properties of silicon quantum wires, based on ab initio electronic structure calculations. The Si wires have a direct, allowed band gap in the visible energy range and exhibit a strong optical anisotropy. Taking into account the electron-hole Coulomb interaction, the geometrical restriction of excitons dramatically enhances the oscillator strength of the optical transitions. Comparisons with recent experimental results are also made.
- Received 28 May 1992
DOI:https://doi.org/10.1103/PhysRevLett.69.2400
©1992 American Physical Society