Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted exciton

Takahisa Ohno, Kenji Shiraishi, and Tetsuo Ogawa
Phys. Rev. Lett. 69, 2400 – Published 19 October 1992
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Abstract

We theoretically investigate excitonic effects on the optical properties of silicon quantum wires, based on ab initio electronic structure calculations. The Si wires have a direct, allowed band gap in the visible energy range and exhibit a strong optical anisotropy. Taking into account the electron-hole Coulomb interaction, the geometrical restriction of excitons dramatically enhances the oscillator strength of the optical transitions. Comparisons with recent experimental results are also made.

  • Received 28 May 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.2400

©1992 American Physical Society

Authors & Affiliations

Takahisa Ohno, Kenji Shiraishi, and Tetsuo Ogawa

  • NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, Japan
  • NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan

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Issue

Vol. 69, Iss. 16 — 19 October 1992

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