Exciton spin dynamics in GaAs heterostructures

S. Bar-Ad and I. Bar-Joseph
Phys. Rev. Lett. 68, 349 – Published 20 January 1992
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Abstract

We report the experimental observation of exciton spin relaxation in GaAs quantum wells in moderate magnetic fields. We resolve the electron and hole contributions and discuss the large sensitivity of the spin-relaxation time to exciton localization and quantum well width. We use the long duration of spin orientation to demonstrate deep transient oscillations, resulting from biexcitonic effects.

  • Received 12 August 1991

DOI:https://doi.org/10.1103/PhysRevLett.68.349

©1992 American Physical Society

Authors & Affiliations

S. Bar-Ad and I. Bar-Joseph

  • Department of Physics, The Weizmann Institute of Science, Rehovot 76100, Israel

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Vol. 68, Iss. 3 — 20 January 1992

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