Optical rectification at semiconductor surfaces

Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, and Anthony F. J. Levi
Phys. Rev. Lett. 68, 102 – Published 6 January 1992
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Abstract

We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.

  • Received 16 July 1991

DOI:https://doi.org/10.1103/PhysRevLett.68.102

©1992 American Physical Society

Authors & Affiliations

Shun Lien Chuang

  • Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, and Anthony F. J. Levi

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 68, Iss. 1 — 6 January 1992

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