Fano interference in type-II semiconductor quantum-well structures

K. Maschke; P. Thomas; E. O. Göbel

doi:10.1103/PhysRevLett.67.2646

Fano interference in type-II semiconductor quantum-well structures

K. Maschke, P. Thomas, and E. O. Göbel

Phys. Rev. Lett. 67, 2646 – Published 4 November 1991

Abstract

We predict, on the basis of a model calculation, that Fano interference effects may be observed in type-II quantum-well structures resulting in pronounced nonreciprocal absorption and emission profiles and interference narrowing due to overlapping resonances.

Received 13 September 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.2646

Authors & Affiliations

K. Maschke, P. Thomas, and E. O. Göbel

Fachbereich Physik und Wissenschaften Zentrum für Materialwissenschaften, Phillips Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
Instutut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland