Hot-exciton relaxation in CdxZn1xTe/ZnTe multiple quantum wells

R. P. Stanley, J. Hegarty, R. Fischer, J. Feldmann, E. O. Göbel, R. D. Feldman, and R. F. Austin
Phys. Rev. Lett. 67, 128 – Published 1 July 1991
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Abstract

We have observed the creation of hot excitons at high momentum in CdxZn1xTe multiple quantum wells and subsequent relaxation by LO-phonon emission to give sharp luminescence lines superimposed on a broader background. The difference between the exciton lifetime and dephasing time in these materials allows definite identification of the sharp lines as due to luminescence rather than resonant Raman scattering. The results are consistent with excitons localized in alloy potential fluctuations.

  • Received 26 June 1990

DOI:https://doi.org/10.1103/PhysRevLett.67.128

©1991 American Physical Society

Authors & Affiliations

R. P. Stanley and J. Hegarty

  • Department of Pure and Applied Physics, Trinity College, Dublin D2, Ireland

R. Fischer, J. Feldmann, and E. O. Göbel

  • Fachbereich Physik, Philipps-Universität, Zentrum für Materialwissenschaften, 3550 Marburg, Federal Republic of Germany

R. D. Feldman and R. F. Austin

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

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Vol. 67, Iss. 1 — 1 July 1991

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