Structure analysis of the Si(111)√3 × √3 R30°-Ag surface

M. Katayama, R. S. Williams, M. Kato, E. Nomura, and M. Aono
Phys. Rev. Lett. 66, 2762 – Published 27 May 1991
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Abstract

The structure of the Si(111)√3 × √3 R30°-Ag surface has been analyzed with a novel form of low-energy ion-scattering spectroscopy and energy-minimization calculations. The topmost layer of the surface is formed by Ag atoms with a honeycomb-chained-trimer arrangement in which the intratrimer Ag-Ag distance is 5.1±0.2 Å. At 0.75±0.07 Å below the Ag layer there exists a Si layer with three Si atoms per surface unit cell. The lower layer of the subsequent bulklike Si double layers is split into a honeycomb and a √3 × √3 layer with a large interlayer distance of about 0.6 Å.

  • Received 9 July 1990

DOI:https://doi.org/10.1103/PhysRevLett.66.2762

©1991 American Physical Society

Authors & Affiliations

M. Katayama, R. S. Williams, M. Kato, E. Nomura, and M. Aono

  • Surface and Interface Laboratory, RIKEN Institute, Wako-shi, Saitama 351, Japan
  • Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90024
  • Department of Physics, Ehime University, Matsuyama, Ehime 790, Japan
  • Aono Atomcraft Project, Kaga 1-7-13, Itabashi, Tokyo 173, Japan

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Issue

Vol. 66, Iss. 21 — 27 May 1991

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