Auger recombination within Landau levels in a two-dimensional electron gas

M. Potemski; R. Stepniewski; J. C. Maan; G. Martinez; P. Wyder; B. Etienne

doi:10.1103/PhysRevLett.66.2239

Auger recombination within Landau levels in a two-dimensional electron gas

M. Potemski, R. Stepniewski, J. C. Maan, G. Martinez, P. Wyder, and B. Etienne

Phys. Rev. Lett. 66, 2239 – Published 29 April 1991

Abstract

A strong emission arising from states lying higher in energy than those optically pumped is observed under interband excitation into partially filled Landau levels of a modulation-doped GaAs quantum-well structure in a magnetic field. The intensity of this emission depends quadratically on the excitation power and is strongly influenced by magnetic field through the occupancy of the Landau levels. This effect demonstrates the high efficiency of Auger processes in partially filled Landau levels of a two-dimensional electron gas.

Received 14 November 1990

DOI:https://doi.org/10.1103/PhysRevLett.66.2239

Authors & Affiliations

M. Potemski, R. Stepniewski, J. C. Maan, G. Martinez, P. Wyder, and B. Etienne

Hochfeld-Magnetlabor, Max-Planck-Institut für Festkörperforschung, BP 166X, 38042 Grenoble, France
Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland
Service National des Champs Intenses, Centre National de la Recherche Scientifique, BP 166X, 38042 Grenoble, France
Institute of Experimental Physics, University of Warsaw, 00681 Warsaw, Poland
Laboratoire de Microstructures et de Microelectronique, Centre National de la Recherche Scientifique, 92220 Bagneux, France