Well-resolved band-edge photoluminescence of excitons confined in strained ${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ quantum wells

We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. At liquid-He temperatures the photoluminescence is due to shallow bound excitons, and in addition to a no-phonon line, phonon-assisted transitions involving TA phonons and Si-Si, Si-Ge, and Ge-Ge TO phonons are observed At higher temperatures the spectra are dominated by free-exciton luminescence. Quantum-confinement effects shift the observed free-exciton edge above the bulk strained band-gap energy, and also influence the relative intensities of the three TO-phonon replicas.