Phase transition of an exciton system in GaAs coupled quantum wells

T. Fukuzawa, E. E. Mendez, and J. M. Hong
Phys. Rev. Lett. 64, 3066 – Published 18 June 1990
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Abstract

We have observed a sharp reduction of the photoluminescence linewidth from a two-dimensional exciton system (coupled GaAs/AlGaAs quantum wells), at a certain critical temperature (Tc) and under the influence of an electric field. We attribute this narrowing to a phase transition of the exciton system into an ordered state. The experiments suggest that a coherence length long enough to wash out the effect of the fluctuations, which cause the line broadening, is introduced below Tc.

  • Received 2 April 1990

DOI:https://doi.org/10.1103/PhysRevLett.64.3066

©1990 American Physical Society

Authors & Affiliations

T. Fukuzawa

  • IBM Research, Tokyo Research Laboratory, Sanban-cho, Tokyo 102, Japan

E. E. Mendez and J. M. Hong

  • IBM Research, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 64, Iss. 25 — 18 June 1990

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