Biexcitons in semiconductor quantum dots

Y. Z. Hu, S. W. Koch, M. Lindberg, N. Peyghambarian, E. L. Pollock, and Farid F. Abraham
Phys. Rev. Lett. 64, 1805 – Published 9 April 1990
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Abstract

Theoretical and experimental results are reported which provide the first evidence for biexciton states in semiconductor quantum dots. The theory predicts an increasing biexciton binding energy with decreasing dot size. Unlike bulk semiconductors, quantum dots have excited biexciton states which are stable. These biexciton states are observed as pronounced induced absorption features on the high-energy side of the bleached exciton resonances in femtosecond and nanosecond pump-probe experiments of quantum dots in glass matrices.

  • Received 27 December 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.1805

©1990 American Physical Society

Authors & Affiliations

Y. Z. Hu, S. W. Koch, M. Lindberg, N. Peyghambarian, E. L. Pollock, and Farid F. Abraham

  • Department of Physics, University of Arizona, Tucson, Arizona 85721
  • Optical Sciences Center, University of Arizona, Tucson, Arizona 87521
  • Lawrence Livermore National Laboratory, University of California, Livermore, California 94550
  • IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120

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Issue

Vol. 64, Iss. 15 — 9 April 1990

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