Abstract
Zero-bias tunneling of electrons between a quantum well and an substrate is studied with excitation voltages smaller than T. At low temperatures and only with magnetic field applied perpendicular to the plane of the electron gas in the well, the tunneling rate develops a novel temperature-dependent suppression. The suppression strength is roughly independent of Landau-level filling for densities 0.5× to 6× . The data are interpreted in terms of a magnetic-field-induced energy gap, at the Fermi level, in the single-particle spectrum of electrons in the well.
- Received 27 November 1989
DOI:https://doi.org/10.1103/PhysRevLett.64.681
©1990 American Physical Society