Diluted magnetic III-V semiconductors

A new diluted magnetic III-V semiconductor of ${\mathrm{In}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$As (x≤0.18) has been produced by molecular-beam epitaxy. Films grown at 300 °C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 °C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.