Quantized conductance of point contacts in a two-dimensional electron gas

B. J. van Wees, H. van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon
Phys. Rev. Lett. 60, 848 – Published 29 February 1988
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Abstract

Ballistic point contacts, defined in the two-dimensional electron gas of a GaAs-AlGaAs heterostructure, have been studied in zero magnetic field. The conductance changes in quantized steps of e2/πħ when the width, controlled by a gate on top of heterojunction, is varied. Up to sixteen steps are observed when the point contact is widened from 0 to 360 nm. An explanation is proposed, which assumes quantized transverse momentum in the point-contact region.

  • Received 31 December 1987

DOI:https://doi.org/10.1103/PhysRevLett.60.848

©1988 American Physical Society

Authors & Affiliations

B. J. van Wees

  • Department of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands

H. van Houten, C. W. J. Beenakker, and J. G. Williamson

  • Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands

L. P. Kouwenhoven and D. van der Marel

  • Department of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands

C. T. Foxon

  • Philips Research Laboratories, Redhill, Surrey RH1 5HA, United Kingdom

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Issue

Vol. 60, Iss. 9 — 29 February 1988

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