Picosecond Raman studies of the Fröhlich interaction in semiconductor alloys

J. A. Kash, S. S. Jha, and J. C. Tsang
Phys. Rev. Lett. 58, 1869 – Published 4 May 1987
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Abstract

Picosecond Raman studies on the prototypic alloys AlxGa1xAs and InxGa1xAs show that substantial nonequilibrium phonon effects occur in spite of the break-down in wave-vector conservation engendered by alloy disorder. Phonon lifetimes, measured to be the same as in pure GaAs, also are unaffected by the disorder. Explicit expressions for the Fröhlich couplings of the two LO phonon modes in AlxGa1xAs are obtained to compare with the generation rates of these phonons measured in our experiments.

  • Received 15 October 1986

DOI:https://doi.org/10.1103/PhysRevLett.58.1869

©1987 American Physical Society

Authors & Affiliations

J. A. Kash, S. S. Jha, and J. C. Tsang

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 58, Iss. 18 — 4 May 1987

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