Variable stoichiometry surface reconstructions: New models for GaAs(1¯1¯1¯) (2×2) and (√1¯9¯×√1¯9¯)

E. Kaxiras, Y. Bar-Yam, J. D. Joannopoulos, and K. C. Pandey
Phys. Rev. Lett. 57, 106 – Published 7 July 1986
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Abstract

The (1¯ 1¯ 1¯) surface of GaAs exhibits three stable reconstructions. Two are (2×2), As stabilized and Ga stabilized respectively, and the third is (√19 × √19 ). Transitions between these structures are obtained by variation of the experimental conditions. We propose new models for all of the above reconstructions, based on ab initio total-energy calculations and experimental information regarding surface composition.

  • Received 27 March 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.106

©1986 American Physical Society

Authors & Affiliations

E. Kaxiras, Y. Bar-Yam, and J. D. Joannopoulos

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

K. C. Pandey

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 57, Iss. 1 — 7 July 1986

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