Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2

E. Kaxiras, K. C. Pandey, Y. Bar-Yam, and J. D. Joannopoulos
Phys. Rev. Lett. 56, 2819 – Published 30 June 1986; Erratum Phys. Rev. Lett. 57, 923 (1986)
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Abstract

The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures.

  • Received 18 February 1986

DOI:https://doi.org/10.1103/PhysRevLett.56.2819

©1986 American Physical Society

Erratum

Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition on GaAs(111)2×2

E. Kaxiras, K. C. Pandey, Y. Bar-Yam, and J. D. Joannopoulos
Phys. Rev. Lett. 57, 923 (1986)

Authors & Affiliations

E. Kaxiras and K. C. Pandey

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Y. Bar-Yam and J. D. Joannopoulos

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Vol. 56, Iss. 26 — 30 June 1986

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