Abstract
Using first-principles self-consistent total-energy calculations for unconstrained and epitaxially confined models of Si-C and Si-Ge alloys we study the general classes of stability of ordered phases of semiconductor alloys. The unusual ordering observed in SiGe grown on a Si substrate is explained.
- Received 5 December 1985
DOI:https://doi.org/10.1103/PhysRevLett.56.1400
©1986 American Physical Society