Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells

W. H. Knox, C. Hirlimann, D. A. B. Miller, J. Shah, D. S. Chemla, and C. V. Shank
Phys. Rev. Lett. 56, 1191 – Published 17 March 1986
PDFExport Citation

Abstract

We report the first direct observation of nonthermal photoexcited carrier distributions in GaAs quantum-well structures. We present experimental studies which show that these distributions thermalize within 200 fs. In addition we are able to show that near the band edge the effect of long-range Coulomb screening on the bleaching of the two-dimensional-exciton resonances is much weaker than that of the Pauli exclusion principle.

  • Received 15 October 1985

DOI:https://doi.org/10.1103/PhysRevLett.56.1191

©1986 American Physical Society

Authors & Affiliations

W. H. Knox, C. Hirlimann, D. A. B. Miller, J. Shah, D. S. Chemla, and C. V. Shank

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

References (Subscription Required)

Click to Expand
Issue

Vol. 56, Iss. 11 — 17 March 1986

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×