Abstract
We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as .
- Received 17 September 1985
DOI:https://doi.org/10.1103/PhysRevLett.56.1198
©1986 American Physical Society