Abstract
Measurements of the tunneling rate out of the zero-voltage state for several Nb edge junctions with differing shunt capacitances are described. At zero temperature, increasing the shunt capacitance lowers in agreement with dissipative calculations of the macroscopic-quantum-tunneling rate. As temperature increases, as recently predicted.
- Received 26 December 1984
DOI:https://doi.org/10.1103/PhysRevLett.54.2712
©1985 American Physical Society