Barrier to Migration of the Silicon Self-Interstitial

Y. Bar-Yam and J. D. Joannopoulos
Phys. Rev. Lett. 52, 1129 – Published 26 March 1984
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Abstract

The first total-energy calculations of barriers to interstitial migration have been used to study silicon self-interstitial migration. Migration occurs through the low-electron-density path. Relaxation was found to be important in determining the barrier for both Si(0) and Si(++). Electron-assisted migration has been demonstrated. Si(++) was found to have lower energy at the tetrahedral site while Si(0) has lower energy at the hexagonal site.

  • Received 15 August 1983

DOI:https://doi.org/10.1103/PhysRevLett.52.1129

©1984 American Physical Society

Authors & Affiliations

Y. Bar-Yam and J. D. Joannopoulos

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Issue

Vol. 52, Iss. 13 — 26 March 1984

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