Abstract
The first total-energy calculations of barriers to interstitial migration have been used to study silicon self-interstitial migration. Migration occurs through the low-electron-density path. Relaxation was found to be important in determining the barrier for both and . Electron-assisted migration has been demonstrated. was found to have lower energy at the tetrahedral site while has lower energy at the hexagonal site.
- Received 15 August 1983
DOI:https://doi.org/10.1103/PhysRevLett.52.1129
©1984 American Physical Society