Simple Scheme for Deriving Atomic Force Constants: Application to SiC

D. H. Lee and J. D. Joannopoulos
Phys. Rev. Lett. 48, 1846 – Published 28 June 1982; Errata Phys. Rev. Lett. 52, 1054 (1984); Phys. Rev. Lett. 49, 244 (1982)
PDFExport Citation

Abstract

A scheme is presented for deriving atomic force constants that is fairly accurate, yet simple enough to allow determination of the dynamical matrix of bulk solids, relaxed and reconstructed surfaces, defects, etc. For illustrative purposes, the method is applied to bulk SiC to predict the phonon dispersion curves throughout the entire Brillouin zone, and to a carbon vacancy in SiC to study the change of atomic force constants due to atomic relaxations.

  • Received 16 November 1981

DOI:https://doi.org/10.1103/PhysRevLett.48.1846

©1982 American Physical Society

Errata

Simple Scheme for Deriving Atomic Force Constants: Application to SiC

D. H. Lee and J. D. Joannopoulos
Phys. Rev. Lett. 52, 1054 (1984)

Simple Scheme for Deriving Atomic Force Constants: Application to SiC.

D. H. Lee and J. D. Joannopoulos
Phys. Rev. Lett. 49, 244 (1982)

Authors & Affiliations

D. H. Lee and J. D. Joannopoulos

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

References (Subscription Required)

Click to Expand
Issue

Vol. 48, Iss. 26 — 28 June 1982

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×